MD simulations of chlorine plasmas interaction with ultrathin silicon films for advanced etch processes

Molecular dynamics simulations are performed to study the interaction between chlorine plasmas and ultrathin silicon films under pulsed plasma conditions. The ion energy appears to be the key parameter to control the etch process since both the mixed layer thickness and the etch yield are fairly reduced when the ion energy is decreased from 100eV to 10eV. The neutral-to-ion flux ratio and the neutral dissociation rate also have an impact but to a lesser extent.