Title :
Charge sensing of two isolated double quantum dots
Author :
Tsung-Yeh Yang;Samaresh Das;Thierry Ferrus;Aleksey Andreev;David A. Williams
Author_Institution :
Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
fDate :
6/1/2014 12:00:00 AM
Abstract :
We report the charge sensing of two isolated double quantum dots (IDQDs) at 4.2 K. The structure is fabricated through trench isolation of highly doped n-type silicon on silicon-on-insulator wafer. Each device contains one pair of IDQDs and one single electron transistor (SET) which serves as an electrometer. We detect the charge motion in each IDQD and the results are consistent with the simulation.
Keywords :
"Quantum dots","Silicon","Single electron transistors","Logic gates","Stability analysis","Current measurement","Scanning electron microscopy"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348580
