DocumentCode
3706348
Title
Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield
Author
Peng Zheng;Yi-Bo Liao;Nattapol Damrongplasit;Meng-Hsueh Chiang;Wei-Chou Hsu;Tsu-Jae King Liu
Author_Institution
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA
fYear
2014
fDate
6/1/2014 12:00:00 AM
Firstpage
1
Lastpage
2
Abstract
This work benchmarks the performance of GAA MOSFETs against that of optimized SOI FinFETs at 10 nm gate length. The yield of 6-T SRAM cells implemented with these advanced MOSFET structures is then investigated. GAA MOSFET technology is projected to provide for 0.1 V lower minimum cell operating voltage with reduced cell area.
Keywords
"FinFETs","SRAM cells","Logic gates","Performance evaluation","Solid modeling"
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN
978-1-4799-5676-0
Type
conf
DOI
10.1109/SNW.2014.7348585
Filename
7348585
Link To Document