Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing

Reliability characteristics (retention and endurance) of RRAM are critical for its practical realization and need to be improved. In this work, we confirmed the trade-off between retention and endurance by using various top electrode thickness conditions. To improve both retention and endurance characteristics, we proposed a new method by using high-pressure hydrogen annealing. Finally, we obtained both improved retention and endurance characteristics in HfO_X based RRAM devices after high-pressure hydrogen annealing treatment.