• DocumentCode
    3706352
  • Title

    Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

  • Author

    Yui-Hong Matthias Tan;Hoon Ryu;Bent Weber;Sunhee Lee;Rajib Rahman;Lloyd C. L. Hollenberg;Michelle Y. Simmons;Gerhard Klimeck

  • Author_Institution
    Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Donor-based silicon phosphorus devices are regarded as promising candidates for quantum computing architectures. The precise number of donors in an ultra-scaled silicon phosphorus double donor-dot device [1] is determined via comparison of theoretically modeled binding energy confidence bands with experimental charge stability diagram measurements. High fidelity of modeling results are enabled through a comprehensive analysis of atomistic dopant placement fluctuations.
  • Keywords
    "Silicon","Phosphorus","Semiconductor process modeling","Computational modeling","Quantum computing","Atomic measurements","Physics"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348589
  • Filename
    7348589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706352