Back-gating effects on radio-frequency reflectometry-based characteriztaion of nanoscale Si single-electron transistors

We apply radio-frequency reflectometry (RFR) to nanowire Silicon-On-Insulator (SOI) single-electron transistors with a novel experimental configuration in which RFR is performed simultaneously at both the drain and gate of the device. We use this technique to investigate the effects of back-gating on the measured RFR characteristics of the SETs, and discuss possible experimental limitations of this technique.