• DocumentCode
    3706355
  • Title

    Full-band modeling of mobility in p-type FinFETs

  • Author

    Z. Stanojević;O. Baumgartner;M. Karner;La. Filipović;C. Kernstock;H. Kosina

  • Author_Institution
    Institute for Microelectronics, TU Wien, Guß
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present a framework for modeling the low-field mobility of ultra-narrow Si channels such as FinFETs based on a full-band description of the electronic structure. Hole mobility is of particular interest since its calculation necessitates a full-band approach. Our approach is entirely based on physical modeling and thus naturally includes effects of gate field, crystal orientation, or strain.
  • Keywords
    "Scattering","Computational modeling","Semiconductor process modeling","FinFETs","Silicon","Logic gates","Strain"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348592
  • Filename
    7348592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706355