Title :
Novel BEOL InGaZnO R-load-type logic-gate technology
Author :
Chin-Wen Chan;Horng-Chih Lin;Tiao-Yuan Huang
Author_Institution :
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
fDate :
6/1/2014 12:00:00 AM
Abstract :
N-channel InGaZnO (IGZO) inverters with a resistor-load were fabricated with film-profile engineering (FPE). In this scheme the profiles of the deposition films contained in the device are tailored to adjust its operation characteristics. The fabricated drive thin-film transistors (TFTs) show steep subthreshold swing (88 mV/dec) and high on/off current ratio (>108). Functional operation of the inverters is demonstrated with this simple scheme.
Keywords :
"Inverters","Thin film transistors","Resistors","Logic gates","Films","Bridge circuits","Very large scale integration"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348596
