• DocumentCode
    3706360
  • Title

    Simple design guideline for negative capacitnace FET using ferroelectric materials

  • Author

    Duckseoung Kang;Kyunghwan Lee;Shigenobu Maeda;Hyungcheol Shin

  • Author_Institution
    Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper provides the simple design guideline of negative capacitance FET (NCFET). By considering average slope in polarization of a ferroelectric (FE) material according to electric field, simple design guideline was suggested to find the optimal thickness of FE material in NCFET where SS becomes 60 mV/dec. As the thickness of FE material increases, subthreshold swing (SS) becomes improved until limit condition occurs.
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348597
  • Filename
    7348597
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706360