• DocumentCode
    3706361
  • Title

    50 nm AlxOy ReRAM array retention characteristics before and after endurance

  • Author

    Hiroki Yamazawa;Sheyang Ning;Tomoko Ogura Iwasaki;Shuhei Tanakamaru;Koh Johguchi;Ken Takeuchi

  • Author_Institution
    Dept. of Electrical, Electronic, and Communication Engineering, Chuo University, Tokyo, Japan
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work investigates resistive random access memory (ReRAM) data retention after different set/reset endurance cycles on a 50 nm Mega-bit-class AlxOy ReRAM array. The high resistance state (HRS) before forming and low resistance state (LRS) after forming show the best retention compared with after set/reset programming. When set/reset cycles increase, the LRS retention becomes better, whereas HRS retention gets worse, probably because the filament size becomes larger. Consequently, the retention time of ReRAM is degraded as the device is worn out and the error rate of HRS becomes dominant.
  • Keywords
    "Resistance","Bit error rate","Arrays","Electrical resistance measurement","Yttrium","Temperature measurement","Random access memory"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348598
  • Filename
    7348598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706361