• DocumentCode
    3706363
  • Title

    Statistical analysis of minimum operation voltage (Vmin) in fully depleted silicon-on-thin-BOX (SOTB) SRAM cells

  • Author

    Tomoko Mizutani;Yoshiki Yamamoto;Hideki Makiyama;Tomohiro Yamashita;Hidekazu Oda;Shiro Kamohara;Nobuyuki Sugii;Toshiro Hiramoto

  • Author_Institution
    Institute of Industrial Science, The University of Tokyo, Japan
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The minimum operation voltage (Vmin) of fully depleted (FD) silicon-on-thin-BOX (SOTB) SRAM cells are measured and statistically analyzed. It is newly found that Vmin deviates from a normal distribution and follows a log-normal distribution. Furthermore, it is found that the behaviors of the worst Vmin are different from the median Vmin or static noise margin (SNM), indicating that cell stability of high density SRAM must be judged by the worst Vmin.
  • Keywords
    "SRAM cells","Stability analysis","Gaussian distribution","Log-normal distribution","Circuit stability","Voltage measurement"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348600
  • Filename
    7348600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706363