Title :
Optimization and modeling of npn-type selector for resistive RRAM in cross-point array structure
Author :
Min-Hwi Kim;Sunghun Jung;Sungjun Kim;Seongjae Cho;Jong-Ho Lee;Hyungcheol Shin;Byung-Gook Park
Author_Institution :
Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
fDate :
6/1/2014 12:00:00 AM
Abstract :
In this paper, we investigate the characteristics of npn device as a candidate for RRAM selector. npn selector shows high current density and selectivity which are key metrics for the bidirectional select device. We confirm that length and doping concentration of base and emitter region can be varied to optimize the characteristic of the selector. In addition, we observe AC characteristic with 10 ns pulse width and interval. We confirm that I-V curve is well fitted with a combination of exponential and quadratic terms.
Keywords :
"Arrays","Doping","Current density","Anodes","Optimization","Random access memory"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348605
