Title :
Impact of line edge roughness on RTN in SRAM cells with 70 Å nanowire FET
Author :
Dogyun Son;Duckseoung Kang;Sungwon Yoo;Youngsoo Seo;Hyungcheol Shin
Author_Institution :
Inter university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
fDate :
6/1/2014 12:00:00 AM
Abstract :
In this paper, we investigate the impact of line edge roughness (LER) combined with random telegraph noise (RTN) induced by carrier trapping on threshold voltage and stability of SRAM cells with 70 Å nanowire FETs. It is found that LER combined with RTN boosts VT fluctuation more than the case with the single noise source. Its effect can limit aggressive scaling seriously.
Keywords :
"SRAM cells","Field effect transistors","Fluctuations","Logic gates","Semiconductor process modeling","Degradation","Electron traps"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348608
