• DocumentCode
    3706373
  • Title

    Novel tri-state latch using single-peak negative differential resistance devices

  • Author

    Sunhae Shin;Kyung Rok Kim

  • Author_Institution
    Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, South Korea
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We propose a novel tri-state latch based on single-peak MOS-NDR. By shifting peak voltage over half of the supply voltage, tri-state memory can be implemented. The fully suppressed valley current of MOS-NDR guarantees the supply voltage design margin in tri-state logic and memory.
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348610
  • Filename
    7348610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706373