• DocumentCode
    3706377
  • Title

    Dual-material gate schottky barrier UTB DG MOSFETs with Ge and III-V channel

  • Author

    W. Choi;J. Lee;M. Shin

  • Author_Institution
    Dept. Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Rep. of Korea
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Dual-material gate (DMG) Schottky Barrier (SB) MOSFETs with Si, Ge, and III-V channel are investigated by full quantum mechanical simulations. We find that DMG can be a significant performance booster which can overcome the limitations of SB MOSFETs. By applying DMG, on-state currents of Si, Ge, and GaSb channel devices increase by 3 to 4 times and ambipolar currents of InAs channel devices are suppressed below 0.1 μA/μm, resulting in ION/IOFF of greater than 103.
  • Keywords
    "Logic gates","MOSFET","Silicon","Metals","Tunneling","Schottky barriers","Performance evaluation"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348614
  • Filename
    7348614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706377