• DocumentCode
    3708541
  • Title

    The impact of FinFET technology scaling on critical path performance under process variations

  • Author

    Osama Abdelkader;Hassan Mostafa;Hamdy Abdelhamid;Ahmed Soliman

  • Author_Institution
    Mentor Graphics Corporation, Cairo University, Giza, Egypt
  • fYear
    2015
  • fDate
    3/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Comparisons of FinFET based ring oscillator (RO) metrics are evaluated with technology scaling from 20nm to 7nm technology. Simulations are based on predictive technology models (PTM) developed by Arizona state university. The impact of process and temperature variations on frequency, power, and power delay product is reported. Performance and power of the RO are improved with technology scaling, however performance is degraded after 14nm technology.
  • Keywords
    "Temperature","Threshold voltage","FinFETs","Logic gates","Performance evaluation","Delays","Market research"
  • Publisher
    ieee
  • Conference_Titel
    Energy Aware Computing Systems & Applications (ICEAC), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/ICEAC.2015.7352194
  • Filename
    7352194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3708541