Parallel injection current modulation of Mach-Zehnder interferometer modulator on silicon on insulator

Active and passive optical devices for modulators on silicon on insulator (SOI) is becoming very popular now due to easy fabrication and downscaling factors. Mach-Zehnder interferometer (MZI) for modulator, microring oscillator (MRO) for filter and arrayed waveguide grating (AWG) for multiplexing and demultiplexing wavelengths are among popular devices used for sensor or optical communication components. MZI modulator using injection of minority carrier in parallel with the optical signal propagation is an alternative which could offer easy design and fabrication compared to transverse injection current. This type of design, where p and n region are on the same MZI arm is predicted to offer many fabrication and operating benefit than the current transverse p-n junction.