DocumentCode :
3710600
Title :
Characterization of ROFF/RON ratio of fluidic based memristor sensor for pH detection
Author :
Nor Shahanim Mohamad Hadis;Asrulnizam Abd Manaf;Sukreen Hana Herman
Author_Institution :
Advanced Integrated System Device (AISDe), School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang, Malaysia
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper reports a new design for a memristor with an embedded channel to study the effect of liquids on ROFF/RON ratio. There were three types of liquid selected to represent all pH groups comprise of acidity, neutrality, and alkalinity. The liquids were added to the channel and the ROFF/RON ratio was calculated based on the I-V characteristics. The obtained ROFF/RON ratios showed a direct proportional relationship between ROFF/RON ratio and the pH value indicating the potential of this embedded channel memristor to be used as the most flexible ROFF/RON ratio memristor. The low ROFF/RON ratio of normal memristor at low voltage can be improved by adding alkaline liquid to the channel. The structure of the proposed memristor device is believed to be the simplest structure among the other similar sensors developed by other researchers.
Keywords :
"Memristors","Liquids","Hysteresis","Fabrication","Indium tin oxide","Glass","Sputtering"
Publisher :
ieee
Conference_Titel :
Micro and Nanoelectronics (RSM), 2015 IEEE Regional Symposium on
Type :
conf
DOI :
10.1109/RSM.2015.7354956
Filename :
7354956
Link To Document :
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