Fabrication and electrical characterization of graphene oxide as transducing channel for biosensor application

In this paper, we present the fabrication and electrical characterization of field-effect transistor-based sensor with integrated graphene oxide (GO) on channel between source and drain. We aim to demonstrate the optimum condition in electrical performance for field-effect transistor-based biosensor device. Graphene oxide prepared by using modified hummers method was deposited on the channel with different amount to act as amplification layer on the FET. The structural properties of GO were examined using photoluminescence (PL). A 3D surface profilometer were used to observe the surface morphology of GO-FET. Multi-graphene layer on the FET channel result in increasing the current flow in the device and make it more sensitive to be used as biosensor.