Deposition and characterization of ZnO thin film for FET with back gate biasing-based biosensors application

This paper presents the preparation and characterization of zinc oxide (ZnO) thin film prior deposition on the channel of field-effect transistor with back gate biasing (FET-BG) for biosensing application. Sol-Gel technique is a chosen method for the preparation of the ZnO seed solution, followed by the deposition process through spin coating technique on the silicon dioxide (SiO₂). Prior to that, the SiO₂ layer is grown on a silicon die. The ZnO seed solution is deposited at various numbers of coating layer (1, 3, and 5 coating layers), baked, and annealed prior to characterization of its surface morphological, structural, crystalline phase, and electrical characterization. The results obtained give a significant evidences for the future deposition process of the ZnO thin films as the FET-BG biosensor device on the silicon-on-insulator (SOI) wafer.