• DocumentCode
    3710790
  • Title

    High-voltage SiC devices: Diodes and MOSFETs

  • Author

    J. Mill?n;P. Friedrichs;A. Mihaila;V. Soler;J. Rebollo;V. Banu;P. Godignon

  • Author_Institution
    Institut de Micoelectr?nica de Barcelona, Centre Nacional de Microelectr?nica, IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Spain
  • fYear
    2015
  • Firstpage
    11
  • Lastpage
    18
  • Abstract
    This paper reviews recent achievements on high-voltage SiC-based devices aimed at Wind Power and Solid-State Transformer applications. SiC diodes with voltage ranges between 1.7kV and 9kV have been designed and fabricated. On the other hand, SiC JFETs and, specially, SiC MOSFETs are also under development, and preliminary prototypes of 3.3 kV SiC MOSFETs are reported.
  • Keywords
    "Silicon carbide","Schottky diodes","Silicon","PIN photodiodes","Rectifiers","Insulated gate bipolar transistors"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2015 International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4799-8862-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2015.7355148
  • Filename
    7355148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710790