Title :
Nanowire junctionless silicon-on-insulator MOSFETs: Operation features and electrical characterization
Author :
A. N. Nazarov;T. E. Rudenko
Author_Institution :
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
Abstract :
In this work we provide an overview of some features of operation junctionless MOSFETs, such as enhanced electron mobility in heavily doped narrow nanowire channels, steep subthreshold slope of such device associated with impact ionization process in the channel, and extraction of main electrical characteristics. Peculiar properties of random telegraph noise in junctionless MOSFET are reviewed separately.
Keywords :
"MOSFET","Impact ionization","Logic gates","Electron mobility","Silicon","Doping"
Conference_Titel :
Semiconductor Conference (CAS), 2015 International
Print_ISBN :
978-1-4799-8862-4
DOI :
10.1109/SMICND.2015.7355150
