Title :
A setup for very high temperature measurements of power semiconductors exceeding 500 ?C
Author :
Christian Unger;Manuela Mocanu;Michael Ebli;Martin Pfost
Author_Institution :
Robert Bosch Center for Power Electronics, Reutlingen University, Alteburgstr. 150, 72762, Germany
Abstract :
This paper presents a measurement setup and an assembly technique suitable for characterization of power semiconductor devices under very high temperature conditions exceeding 500 °C. An important application of this is the experimental investigation of wide bandgap semiconductors. Measurement results are shown for a 1200V SiC MOSFET and a 650V depletion mode GaN HEMT.
Keywords :
"Temperature measurement","Semiconductor device measurement","Temperature sensors","Temperature distribution","Heating","Current measurement","Gallium nitride"
Conference_Titel :
Semiconductor Conference (CAS), 2015 International
Print_ISBN :
978-1-4799-8862-4
DOI :
10.1109/SMICND.2015.7355191
