• DocumentCode
    3710831
  • Title

    Reliability characterization of power devices which operate under power cycling

  • Author

    Dan Simon;Cristian Boianceanu;Gilbert De Mey;Vasile ?opa

  • Author_Institution
    Infineon Technologies Romania, ATV PTP TM, 020335 Bucharest, Romania
  • fYear
    2015
  • Firstpage
    153
  • Lastpage
    156
  • Abstract
    The safe-operating-area (SOA) of automotive DMOS transistors, which are operated repeatedly under high power pulses (power cycling), is lower than the classical single-pulse SOA and it is dependent on the geometry of the transistor. In this paper, we present a test system for reliability characterization of power devices, of various geometries, which operate under power cycling conditions.
  • Keywords
    "Temperature measurement","Transistors","Temperature sensors","Metals","Reliability","Temperature distribution","Stress"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2015 International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4799-8862-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2015.7355192
  • Filename
    7355192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710831