• DocumentCode
    3710832
  • Title

    New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode

  • Author

    Ph. Galy;S. Athanasiou;S. Cristoloveanu

  • Author_Institution
    STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
  • fYear
    2015
  • Firstpage
    157
  • Lastpage
    160
  • Abstract
    In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.
  • Keywords
    "Logic gates","JFETs","BiCMOS integrated circuits","Junctions","CMOS integrated circuits","CMOS technology"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2015 International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4799-8862-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2015.7355193
  • Filename
    7355193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710832