Title :
New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode
Author :
Ph. Galy;S. Athanasiou;S. Cristoloveanu
Author_Institution :
STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
Abstract :
In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film.
Keywords :
"Logic gates","JFETs","BiCMOS integrated circuits","Junctions","CMOS integrated circuits","CMOS technology"
Conference_Titel :
Semiconductor Conference (CAS), 2015 International
Print_ISBN :
978-1-4799-8862-4
DOI :
10.1109/SMICND.2015.7355193
