• DocumentCode
    3710940
  • Title

    Direct nm-scale spatial mapping of traps in CIGS

  • Author

    P. K. Paul;D. W. Cardwell;C. M. Jackson;K. Galiano;K. Aryal;J. P. Pelz;S. Marsillac;S. A. Ringel;T. J. Grassman;A. R. Arehart

  • Author_Institution
    Electrical and Computer Engineering, The Ohio State University, Columbus, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Using newly developed nanometer-scale deep level transient (nano-DLTS) spectroscopy, the spatial distribution of the EV+0.47 eV trap in p-type Cu(In,Ga)Se2 (CIGS) is mapped simultaneously with topography to correlate the electrical traps with physical structure. It is demonstrated that the EV+0.47 eV trap properties using nano-DLTS match the observed macroscopic properties. Additionally, the EV+0.47 eV map reveals that this trap is not uniformly distributed, is likely correlated with specific grain boundaries, and not related to all grain boundaries. The combined multi-scale approach reveals overall trap impact as well as correlation with physical structures on the nm-scale that can be broadly applied to any semiconductor material.
  • Keywords
    "Transient analysis","Grain boundaries","Physics","Photovoltaic cells","Spectroscopy","Probes","Surface topography"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355656
  • Filename
    7355656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710940