• DocumentCode
    3710964
  • Title

    Four-wire thin-film silicon devices: Towards high efficiency

  • Author

    F. Ventosinos;S. Park;P. G. O´Brien;N.P. Kherani;E.V. Johnson

  • Author_Institution
    LPICM-CNRS, Ecole Polytechnique, Palaiseau, 91128, France
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    A “four-wire” configuration thin-film silicon solar cell design is proposed. Front and middle TCO layers are optimized in order to be used, together with a Bragg reflector, to increase the useful current in the top cell (by about 1 mA/cm2 according to initial calculations) and hence the total photocurrent. Preliminary results from both experiments and numerical simulations are presented, showing the potential and challenges of the design. With reasonable assumptions, a stabilized efficiency of 14% could be achieved.
  • Keywords
    "Indium tin oxide","Photovoltaic cells","Optimization","Silicon","Temperature measurement","Zinc oxide","Junctions"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355680
  • Filename
    7355680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710964