Title :
Photocarrier recombination dynamics in Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 studied by temperature-dependent time resolved Photoluminescence (TR-PL)
Author :
Mohammad Abdul Halim;Muhammad Monirul Islam; Xianjia Luo;Takeaki Sakurai;Noriyuki Sakai;Takuya Kato;Hiroki Sugimoto;Hitoshi Tampo;Hajime Shibata;Shigeru Niki;Katsuhiro Akimoto
Author_Institution :
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Ibaraki, 305-8573, Japan
fDate :
6/1/2015 12:00:00 AM
Abstract :
Temperature dependent time resolved photoluminescence (TR-PL) measurements have been performed in similar structured kesterite Cu2ZnSn(S,Se)4 and chalcopyrite Cu(In,Ga)Se2 thin film absorbers. It is investigated that at 26 K the measured lifetime values for a set of CZTSSe samples are more than one order magnitude higher than at room temperature whereas in CIGS this difference is not significant. At room temperature the significantly lower photoluminescence emission and minority carrier lifetime for CZTSSe comparing to CIGS suggest that the dominant non-radiative recombination processes are associated with CZTSSe than CIGS and it can limit the efficiency of CZTSSe based solar cells.
Keywords :
"Temperature measurement","Photoluminescence","Temperature dependence","Yttrium","Photovoltaic cells"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7355693
