Low-temperature synthesized, p-type transparent conducting material for PV devices

High performing p-type transparent conducting materials (TCMs) are a missing link in thin film photovoltaic technology. In particular, development of a low-temperature synthesis method for a p-type TCM could allow for novel solar cell architectures in devices with sensitive thermal budgets. Here, we have synthesized Cu-alloyed ZnS (CuZnS) at low temperature (T <; 100°C), using both physical and chemical methods, and show it to be a highly hole conducting, transparent semiconductor. Additionally, we have constructed a simple, proof-of-concept PV device on np+ Si, and show promising photocurrent generation, with a JSC over 30 mV/cm2. An efficient PV device using a p-type TCM had not been reported in the literature, in particular with a low temperature process.