• DocumentCode
    3711023
  • Title

    Stability of hydrogen passivated UMG silicon with implied open circuit voltages over 700mV

  • Author

    Sisi Wang;Alison Wenham;Phillip Hamer;Brett Hallam; Ly Mai;Catherine Chan;Nitin Nampalli; Lihui Song;Chee Mun Chong;Malcolm Abbott;Stuart Wenham

  • Author_Institution
    School of Photovoltaics and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Interstitial hydrogen is used to passivate defects in upgraded metallurgical grade (UMG) Czockralski silicon. It is observed that the quality of the UMG material can be improved progressively, with the passivated defects appearing to be stable to subsequent light soaking. New defects however continue to form for a prolonged period of light soaking, requiring subsequent further hydrogen passivation to restore the open circuit voltages to over 700 mV for the UMG wafers. By repeatedly applying the advanced hydrogenation process, the quality and stability of UMG wafers are improved to the point of being comparable to that for Czockralski wafers produced from semiconductor grade silicon purified by the Siemens Process.
  • Keywords
    "Silicon","Hydrogen","Passivation","Laser stability","Degradation","Radiative recombination","Stability analysis"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355739
  • Filename
    7355739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711023