DocumentCode :
3711086
Title :
Investigation on stability of halide treated PbSe quantum dot thin films for photovoltaic devices
Author :
Zhilong Zhang;Robert Patterson;Santosh Shrestha;Gavin Conibeer; Shujuan Huang
Author_Institution :
Sch. of Photovoltaic &
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
PbSe quantum dot solar cells (QDSCs) have great potential for low-cost, high performance photovoltaic devices because of the tunable band gap by wet chemical solution process and excellent performance with multiple exciton generation (MEG). Passivation of PbSe QDs against oxidation is essential for such devices, since the QD solid thin films suffer serious oxidation within hours and degradation in photovoltaic performance. We applied halide treatments directly on PbSe QD thin films and we confirmed the stability of the films has been improved to different extents. We discovered that fluorine treatment did not provide good stability. However chloride, bromide and iodide treatments all improved the stability of the thin films, while the difference is minor within the study period (5 days). We attribute the improvement in stability to the formation of a lead - halide thin layer on the QD surface that serves as a protective layer to oxidation.
Keywords :
"Films","Quantum dots","Oxidation","Photovoltaic systems","Excitons","Photovoltaic cells"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7355802
Filename :
7355802
Link To Document :
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