• DocumentCode
    3711095
  • Title

    Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances

  • Author

    Shun-Chieh Hsu;Yin-Han Chen;Hsuan-An Chen;Shih-Yen Lin;Tien-Lin Shen;Hao-Chung Kuo;Cheng-Lun Shih;Jinn-Kong Sheu;Chien-Chung Lin

  • Author_Institution
    Institute of Photonic System, National Chiao-Tung University, Tainan, 711, Taiwan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the Voc reduction until 80 Suns.
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355811
  • Filename
    7355811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711095