DocumentCode :
3711136
Title :
A new method to characterize c-Si PV cell and module
Author :
Shu-Tsung Hsu;Yean-San Long;Teng-Chun Wu
Author_Institution :
Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu 30011, TAIWAN
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
The photovoltaic (PV) industry is expanding rapidly to meet the growing renewable-energy demands globally. The failure-rate analysis indicated that a large portion of the accelerated PV module qualification failures was related to the failure of the cell itself, which was leading to the yield loss of cells during shipping. Therefore, damaged cell or module caused by shipping is always one of the serious problems to impact their long-term reliability in the field. This paper aims to propose a new test method to characterize c-Si PV cell and module, especially for the application scenarios occurred inside a factory (for process and handling cases) or from a factory to the other factory (for transportation case). Results not only document the best practices for reducing costs to benefit the end customers, but also are helpful to evaluate the performance of reliability for c-Si PV cell and module. Consequently, results have been applied to SEMI Doc. 5431 and passed as SEMI PV 56-1214 [1] successfully in December 2014.
Keywords :
"Electric shock","Reliability","Indexes","Silicon","Standards","Visualization","Decision support systems"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7355853
Filename :
7355853
Link To Document :
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