• DocumentCode
    3711183
  • Title

    Comparison of DC and RF sputtered aluminium-doped zinc oxide for photovoltaic applications

  • Author

    Patrick J. M. Isherwood;Michael Gona;Jake W. Bowers;Nuno Neves;Paul Newbatt;John M. Walls

  • Author_Institution
    CREST, Loughborough University, Leicestershire, LE11 3TU, UK
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    AZO was sputter deposited using both RF and DC power supplies from a pre-formed ceramic AZO target with a 2 wt % aluminium oxide dopant concentration. The target was formed by hot pressing pre-doped nanoparticles produced using an emulsion detonation synthesis technique. AZO films were found to display good optical and electrical properties regardless of deposition technique. Increased temperatures above 200 °C were found to have a negative impact on the electrical properties, with a corresponding increase in infrared transmission. Visible transmission was found to be good (above 79 %) for all films except those deposited using DC power at room temperature. The DC sputtering process was stable and was found to approximately double the deposition rate with no corresponding drop in film quality for films deposited at moderate temperatures. This makes DC deposition more industrially attractive when process temperature is not a concern. For room temperature depositions, RF was found to produce superior transmission and electrical characteristics.
  • Keywords
    "Radio frequency","Temperature","Sputtering","Conductivity","Zinc oxide","Films","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355900
  • Filename
    7355900