• DocumentCode
    3711200
  • Title

    Fabrication and characterization of ZnSnxGe1?xN2 alloys for light absorbers

  • Author

    Amanda M. Shing;Naomi C. Coronel;Nathan S. Lewis;Harry A. Atwater

  • Author_Institution
    California Institute of Technology, Pasadena, 91106 United States of America
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSnxGe1-xN2. The sputtered thin-films show potential for ZnSnxGe1-xN2 to be tunable semiconductor photovoltaic absorber materials.
  • Keywords
    "Metals","Photonic band gap","Films","Conductivity","Sputtering","Radio frequency","Fabrication"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355918
  • Filename
    7355918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711200