• DocumentCode
    3711205
  • Title

    Optical properties of InN-based photodetection devices

  • Author

    Lung-Hsing Hsu;Chien-Chung Lin;Yi-Chia Hwang; Chen-Fung Su; Shih-Yen Lin;Hao-Chung Kuo

  • Author_Institution
    Institute of Lighting and Energy Photonics, National Chiao Tung University, Tainan 711, Taiwan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The InN capped with GaN structures is promising for extended visible and infrared absorption. The low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. The strain effect and mixed InxGa1-xN complex of the GaN/InN layer were investigated via Raman and photoluminescence (PL) measurements. The capping GaN with similar growth temperature of previous InN growth induces the gallium diffusion mechanism to form InxGa1-xN complex. The blue-shift phenomenon of multiple GaN/InN peaks with increasing growth temperature was attributed to residual strain and higher Ga content of InGaN. A ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%.
  • Keywords
    "Epitaxial growth","Optical variables measurement","Temperature measurement","Nitrogen","Optical devices","Optical materials","Temperature distribution"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355923
  • Filename
    7355923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711205