Minority carrier diffusion length measurements in solar cells by electron beam induced current

In this paper, a comparison of established analytical models (Luke and Bonard) for analysis of electron beam induced current profiles across p-n junction solar cell structures is presented. Simulation results are presented for two typical cases; when the diffusion length (L) is comparable to or longer than the base thickness (thin base), and when L is shorter than the device thickness (thick base). In addition, the experimental profiles for both cases are analyzed using different analytical models. Simulation results show that while the Bonard and Luke models have a good agreement for both thin and thick base conditions, the Luke model more closely agrees with experimental profiles for the thin base case.