Laser-induced damage for crystalline silicon solar cells

This paper delves into the electrical characterization of the laser induced damage and in the removal of the damage by the chemical treatment. We believe that an accurate etching removes properly the damage so that there could be more pros than cons that give advantage to this isolating method than the inline expensive wet etching isolating method. For that, a fabrication process is established, which helps to demonstrate the potential of the technique. The correlation between the humps and the laser-induced damage has been demonstrated. This phenomenon has been explained based on the increase of the second exponential saturation current in a small area of the device.