DocumentCode :
3711336
Title :
Relevance Of TCO workfunction in n-silicon oxide emitter - c-Si (p) heterojunction solar cell
Author :
M. Izzi;L. Serenelli;P. Mangiapane;E. Salza;M. Tucci;M. Delia Noce;I. Usatii;E. Bobeico;L.V. Mercaldo;L. Lancellotti;P. Delli Veneri;D. Caputo;G. de Cesare
Author_Institution :
ENEA Casaccia Research Centre Rome, ITALY
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
The amorphous /crystalline silicon heterojunction solar cells have largely demonstrated their usefulness to reach high efficiency. We have adopted a different and wider bandgap emitter based on silicon oxide, n-SiOx. A central role in this type of structure is played from the TCO workfunction whose value affects strongly the heterojunction´s band structure at the emitter interface. RF magnetron sputtered TCO obtained with different deposition parameters, have been made in order to optimize their use in our heterojunction solar cell. Numerical simulation on the SiOx HJ, with TCO having proper workfunction value, show potential efficiency conversion well over the 23%. New Roman Bold font. An example is shown next.
Keywords :
"Heterojunctions","Photovoltaic cells","Optical variables measurement","Biomedical optical imaging","Thickness measurement","Frequency measurement","Silicon"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7356055
Filename :
7356055
Link To Document :
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