• DocumentCode
    3711350
  • Title

    Time-resolved photoluminescence of MBE-grown 1 eV GaAsSbN for multi-junction solar cells

  • Author

    Tomos Thomas;Naofumi Kasamatsu; Kian Hua Tan;Satrio Wicaksono; Wan Khai Loke; Soon Fatt Yoon;Andrew Johnson;Takashi Kita;Nicholas Ekins-Daukes

  • Author_Institution
    Imperial College London, United Kingdom
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    GaAsSbN is an alloy that can achieve 1 eV bandgap lattice-matched to GaAs. The alloy may be an interesting alternative to the more common GaInNAs(Sb) used in high efficiency multi-junction solar cells, as GaAsSbN shows enhanced nitrogen incorporation. We present photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements taken using a streak camera for a range of double-heterostructure samples. Layers of different thickness and doping are investigated. Effective minority carrier lifetimes are 200-450 ps at room temperature. A difference in behaviour with dopant polarity is noted, with p-type material exhibiting longer minority carrier lifetimes.
  • Keywords
    "Doping","Gallium arsenide","Temperature measurement","Photovoltaic cells","Photoluminescence","Radiative recombination","Photonic band gap"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356069
  • Filename
    7356069
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711350