• DocumentCode
    3711366
  • Title

    Characterization of Cub2SnSe3 thin films fabricated by coevaporation

  • Author

    T. Tanaka;S. Tokunaga;S. Sakamoto;K. Saito;Q. Guo;M. Nishio;X. Han

  • Author_Institution
    Department of Electrical and Electronic Engineering, Saga University, 840-8502, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Cu2SnSe3 (CTSe) thin films were fabricated by coevaporation on soda-tune glass substrates at the substrate temperature of 300 °C under rations Cu/Sn supply ratios. From X-ray diffraction ( XRD) analyses, diffraction peaks of CTSe with a cubic sphalerite structure were observed in all CTSe thin films. In addition, SnSe and SnSe2 phases were also detected in Sn-ricb CTSe thin films. On the other bands, in Cu-rich CTSe thin films, a Cu2Se secondary phase was observed by Raman scattering measurements. Surface and cross-sectional observations revealed that these secondary phases were mostly segregated on the surface of the thin films. The electrical properties of CTSe thin films changed strongly by Cu/Sn ratios in the thin films.
  • Keywords
    "Films","Temperature measurement","Temperature","Raman scattering","Photovoltaic cells","Substrates","Surface treatment"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356085
  • Filename
    7356085
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711366