Cu profiles in CdTe solar cells

CdTe solar cells fabricated with varying amounts of Cu were studied by means of electrical and material characterization. Cu was incorporated in order to form a contacting layer and increase doping. The devices were exposed to elevated-temperature and light stress to induce Cu diffusion. Measurements of J-V, C-V, and QE were periodically taken of the stressed devices. The Cu depth profile was measured via SIMS. Cu concentration is correlated to performance and degradation of the devices.