DocumentCode
3711378
Title
The effects of sputtering target preparation and deposition temperature on ZnTe:Cu film properties
Author
B.R. Faulkner;T.R. Ohno;J.M. Burst;J.N. Duenow;C.L. Perkins;B. To;T.A. Gessert
Author_Institution
Colorado School of Mines, Golden, 80401, USA
fYear
2015
fDate
6/1/2015 12:00:00 AM
Firstpage
1
Lastpage
6
Abstract
A back contact containing a sputtered ZnTe:Cu interface layer can produce high-performing thin-film CdS/CdTe photovoltaic devices. We have found that varying the ZnTe:Cu sputtering target fabrication processes and deposition temperature can affect material properties of the ZnTe:Cu films and the resulting device performance. Two different target “recipes” with various copper contents were used to study changes in the compositional, structural, optical, and electrical properties of ZnTe:Cu films. Substrate temperature during deposition was also varied to investigate the temperature dependence of the films. It was found that the target recipe, Cu concentration in the target, and deposition temperature affect the composition of the ZnTe:Cu films, which impacts their structural, optical, and electrical properties.
Keywords
"X-ray scattering","Magnetic films","Magnetic tunneling","Substrates","Magnetic properties","Indexes","Spectroscopy"
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type
conf
DOI
10.1109/PVSC.2015.7356097
Filename
7356097
Link To Document