• DocumentCode
    3711436
  • Title

    Optoelectronic investigation of Sb-doped Cu(In,Ga)Se2

  • Author

    Lorelle M. Mansfield;Darius Kuciauskas;Patricia Dippo;Jian V. Li;Karen Bowers;Bobby To;Clay DeHart;Kannan Ramanathan

  • Author_Institution
    National Renewable Energy Laboratory, Golden, CO, 80401, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.
  • Keywords
    "Temperature measurement","Photovoltaic cells","Films","Grain size","Admittance","Spectroscopy","Antimony"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356156
  • Filename
    7356156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711436