DocumentCode
3711444
Title
Proof-of-concept p-type silicon solar cells with molybdenum oxide partial rear contacts
Author
James Bullock;Christian Samundsett;Andr?s Cuevas;Di Yan;Yimao Wan;Thomas Allen
Author_Institution
Research School of Engineering, The Australian National University, Canberra, ACT, 2601, Australia
fYear
2015
fDate
6/1/2015 12:00:00 AM
Firstpage
1
Lastpage
4
Abstract
This paper explores the application of transparent MoOx (x<;3) films as hole-collecting contacts on the rear-side of crystalline silicon solar cells. 2D simulations, which consider experimental contact recombination J0c and resistivity ρc values, demonstrate that the benefits of the MoOx based contacts are best exploited by reducing the rear contact fraction. This concept is demonstrated experimentally using simple p-type cells featuring a ~5% rear fraction MoOx contact. These cells attain a conversion efficiency of 20.4%, a promising result, given the early stage of development for this technology.
Keywords
"Surface resistance","Surface treatment","Silicon","Photovoltaic cells","Boron"
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type
conf
DOI
10.1109/PVSC.2015.7356165
Filename
7356165
Link To Document