• DocumentCode
    3711444
  • Title

    Proof-of-concept p-type silicon solar cells with molybdenum oxide partial rear contacts

  • Author

    James Bullock;Christian Samundsett;Andr?s Cuevas;Di Yan;Yimao Wan;Thomas Allen

  • Author_Institution
    Research School of Engineering, The Australian National University, Canberra, ACT, 2601, Australia
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper explores the application of transparent MoOx (x<;3) films as hole-collecting contacts on the rear-side of crystalline silicon solar cells. 2D simulations, which consider experimental contact recombination J0c and resistivity ρc values, demonstrate that the benefits of the MoOx based contacts are best exploited by reducing the rear contact fraction. This concept is demonstrated experimentally using simple p-type cells featuring a ~5% rear fraction MoOx contact. These cells attain a conversion efficiency of 20.4%, a promising result, given the early stage of development for this technology.
  • Keywords
    "Surface resistance","Surface treatment","Silicon","Photovoltaic cells","Boron"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356165
  • Filename
    7356165