DocumentCode
3711466
Title
The effect of Ag incorporation on the phase stability, crystallinity and band structure on the (Cu,Ag)2ZnSn(S,Se)4 kesterite solar cells
Author
Shih-Yuan Wei; Chung-Hao Cai; Wei-Chih Huang; Tzu-Hsuan Yeh; Chih-Huang Lai
Author_Institution
Department of Material Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
fYear
2015
fDate
6/1/2015 12:00:00 AM
Firstpage
1
Lastpage
4
Abstract
The effect of Ag incorporation on the kesterite CZTSSe thin film by vacuum process has been investigated aiming for the band engineering of the kesterite solar cells. Phase stability, crystalinity, morphology and optical properties of Ag2ZnSnSe thin film were firstly reported and measured by XRD, SEM and UV-visible spectrometer in this work. We have successfully fabricated the ACZTSe thin films over a wide range of composition and the optical band gap could be controlled by the Ag/(Cu+Ag) ratio in a range from 1.06eV to 1.3 eV. Finally, the cell performance around 4% was demonstrated by the ACZTSSe devices.
Keywords
"II-VI semiconductor materials","Zinc compounds","Annealing","Indexes","Photonic band gap","Boosting"
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type
conf
DOI
10.1109/PVSC.2015.7356188
Filename
7356188
Link To Document