DocumentCode :
3711477
Title :
Absolute electroluminescence imaging of multi-junction solar cells and calibration standards
Author :
Masahiro Yoshita;Lin Zhu;Changsu Kim;Hidefumi Akiyama;Shaoqiang Chen;Toshimitsu Mochizuki;Hidehiro Kubota;Tetsuya Nakamura;Mitsuru Imaizumi;Yoshihiko Kanemitsu
Author_Institution :
Institute for Solid State Physics (ISSP), University of Tokyo, JST-SENTAN, and JST-CREST, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
We developed absolute electroluminescence (EL) calibration standards to evaluate absolute radiative-emission rates from subcells in multi-junction (MJ) solar cells. The absolute-EL-measurement system consists of an EL imaging setup and an emission-intensity-calibrated planar light-emitting diode with a circular open aperture as an emission-intensity standard. We applied this system to the measurements of the absolute EL imaging of a monolithic satellite-use InGaP/GaAs/Ge MJ solar cell. From the observed absolute EL images, we characterized external EL quantum efficiencies and internal open-circuit voltages of InGaP and GaAs subcells.
Keywords :
"Photonics","Photovoltaic cells","Standards","Semiconductor device measurement","Imaging","Light emitting diodes","Current measurement"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7356199
Filename :
7356199
Link To Document :
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