• DocumentCode
    3711498
  • Title

    >20% efficient 80 ?m thin industrial-type large-area solar cells from 100 ?m Sawn c-Si Wafers

  • Author

    Yvonne Schiele;Nils Brinkmann;Jan Ebser;Renate Horbelt;Alexander Frey;Josh Engelhardt;Giso Hahn;Barbara Terheiden

  • Author_Institution
    Dept. of Phys., Univ. of Konstanz, Konstanz, Germany
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Reducing the thickness of crystalline Si wafers to be processed into solar cells yields several significant benefits: PV module manufacturing cost can be reduced and the required diffusion length of minority carriers is smaller. The latter in turn enables a higher efficiency potential and a larger spread of Si materials to be employed for rear junction solar cell concepts which are advantageous for n-type devices. Industrial-type 80 μm thin large-area rear junction solar cells manufactured from 100 μm wire-sawn wafers exhibit an independently certified efficiency of 20.1% with VOC of 672 mV.
  • Keywords
    "Photovoltaic cells","Silicon","Junctions","Passivation","Conductivity","Current density","Thyristors"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356220
  • Filename
    7356220