DocumentCode :
37115
Title :
Linear Mode Avalanche Photodiode With 1-GHz Bandwidth Fabricated in 0.35- 
m CMOS
Author :
Steindl, Bernhard ; Gaberl, Wolfgang ; Enne, Reinhard ; Schidl, Stefan ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng, Vienna Univ. of Technol., Vienna, Austria
Volume :
26
Issue :
15
fYear :
2014
fDate :
Aug.1, 1 2014
Firstpage :
1511
Lastpage :
1514
Abstract :
We present an avalanche photodiode (APD) with separate absorption and multiplication zone. The APD is fabricated in a 0.35-μm CMOS process using an epitaxial wafer. Due to its thick detection zone, this concept offers a high dynamic quantum efficiency and thus a high resulting dynamic responsivity. Measurements using a 670-nm laser source demonstrate a maximum responsivity of 1.8· 104 A/W at 5 nW and a maximum bandwidth of 1.02 GHz at 5-μW illumination power. A maximum responsivity bandwidth product of 269.7 GHz· A/W was found at 35 V reverse bias voltage and 5-nW optical power.
Keywords :
CMOS integrated circuits; avalanche photodiodes; APD; CMOS; bandwidth 1 GHz; high dynamic quantum efficiency; linear mode avalanche photodiode; maximum responsivity; power 5 nW; size 0.35 mum; voltage 35 V; Bandwidth; Optical device fabrication; Optical fibers; Optical receivers; Optical sensors; Optical variables measurement; Silicon; Avalanche photodiodes; CMOS technology; photo detectors; photodiodes; responsivity bandwidth product;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2014.2327145
Filename :
6825883
Link To Document :
