• DocumentCode
    3711503
  • Title

    Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures

  • Author

    Shi Liu;Xin-Hao Zhao;Calli M. Campbell;Maxwell B. Lassise;Yuan Zhao;Yong-Hang Zhang

  • Author_Institution
    Center for Photonics Innovation, Arizona State University, Tempe, 85287, USA
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 μs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative recombination contributes significantly to the total recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 μs and 3.5 μs, respectively. The interface recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures.
  • Keywords
    "Radiative recombination","Legged locomotion","II-VI semiconductor materials","Cadmium compounds","Chlorine","Doping","Epitaxial growth"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7356225
  • Filename
    7356225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3711503